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Power modules with CoolSiC™ MOSFET open up new opportunities for inverter designers to realize never before seen levels of efficiency and power density. In addition, Silicon Carbide (SiC) is tailoring to application needs by different available topologies from 45 mOhm to 2 mOhm RDS(on).
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Available in different configurations such as 3-level, dual, fourpack, sixpack or as booster, our 1200V SiC MOSFET modules offer a superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses.
All EasyPACK™, EasyDUAL™ and 62mm CoolSiC™ MOSFET power modules can be ordered with pre-applied Thermal Interface Material (TIM).
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